Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Characterization of Cu and Ni precipitates in n- and p-type Czochralski-grown silicon by photoluminescence

Photoluminescence (PL) images and micro-PL maps were taken on nand p-type, Cuand Ni-doped monocrystalline silicon wafers, in which the Ni and Cu had precipitated during ingot growth. Markedly different distributions of the precipitates were observed in the nand p-type samples: in the n-type Cu-doped samples, a particle-lean ring structure was observed, dividing the sample into a central region ...

Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing

Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...

An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450°c Anneal in Czochralski Silicon

Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step anneal, while the retardation during the three-step anneal was less pronounced. With the three-step anneal, the first high temperature 1150°C anneal in N 2 ambie...

Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

In this study, we investigate the nature of some recombination active defects limiting the lifetime in Czochralski (CZ) silicon wafers, in the millisecond range. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use lifetime spectroscopy combine with several anne...

Boron-oxygen defect imaging in p-type Czochralski silicon